Top edge facet development in asymmetric grooves

被引：2

作者：

Bastos, PL

Bongers, MMG

Anders, MJ

Schermer, JJ

Giling, LJ

机构：

[1] Department of Experimental Solid State Physics III, Research Institute of Materials, University of Nijmegen

来源：

SURFACE SCIENCE | 1995年 / 344卷 / 03期

关键词：

epitaxy; etching; faceting;

D O I：

10.1016/0039-6028(95)01009-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The low pressure (20 mbar) organometallic vapour phase epitaxy (LP-OMVPE) of GaAs/GaInP in asymmetric grooves, patterned on ((1) over bar 11)B GaAs substrates, has been examined. One of the characteristic features of this deposition is that facets develop along the top edges where the side wall planes meet the top surface. The origin of small facets at the top edge appears to be due to pre-growth conditions. The development of these facets were found to be related to large relative growth rate differences of the GaAs buffer layer deposition on adjacent planes with different crystallographic orientations.

引用

页码：L1275 / L1279

页数：5

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