PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF BORON-NITRIDE ONTO INP

被引：18

作者：

BATH, A ^{[1
]}

BAEHR, O ^{[1
]}

BARRADA, M ^{[1
]}

LEPLEY, B ^{[1
]}

VANDERPUT, PJ ^{[1
]}

SCHOONMAN, J ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,INORGAN CHEM LAB,2628 BL DELFT,NETHERLANDS

来源：

THIN SOLID FILMS | 1994年 / 241卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(94)90441-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A low temperature plasma enhanced chemical vapour deposition technique was used to grow thin boron nitride films on indium phosphide. The starting materials were ammonia and borane-dimethylamine, the carrier gas being pure hydrogen. The films were characterized by ellipsometry, X-ray photoelectron spectroscopy (XPS) and IR spectroscopy. The electrical properties of the insulator-semiconductor interface were analysed by capacitance-voltage measurements and deep level transient spectroscopy. The deposited layers were identified as being essentially boron nitride, in the hexagonal form, by XPS and IR measurements. Good capacitance modulation was observed with a minimum interface state density distribution of about 5 x 10(11) cm-2 eV-1.

引用

页码：278 / 281

页数：4

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