CURRENT-TUNED GAAS SCHOTTKY-BARRIER IMPATT DIODES FOR 60-96-GHZ OPERATION

被引：3

作者：

SCHAWARZ, RI ^{[1
]}

BONEK, E ^{[1
]}

机构：

[1] VIENNA TECH UNIV, INST HOCHFREQUENZTECH, ARBEITSBEREICH MIKROWELLEN MESSTECH, A-1040 VIENNA, AUSTRIA

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 25期

关键词：

D O I：

10.1049/el:19780548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：812 / 813

页数：2

共 10 条

[1] OSCILLATION CHARACTERISTICS OF MILLIMETER-WAVE IMPATT DIODES MOUNTED IN LOW-IMPEDANCE WAVEGUIDE MOUNTS [J].

AKAIKE, M ;

KATO, H ;

YUKI, S .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (03) :147-151

[2] AVALANCHE-DIODE OSCILLATORS .1. BASIC CONCEPTS [J].

CULSHAW, B ;

GIBLIN, RA ;

BLAKEY, PA .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 37 (05) :577-632

[3] 50 GHZ GALLIUM-ARSENIDE IMPATT OSCILLATOR [J].

GIBBONS, G ;

GOKGOR, HS ;

WICKENS, PR ;

PURCELL, JJ .

ELECTRONICS LETTERS, 1972, 8 (21) :513-&

[4] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].

GILDEN, M ;

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&

[5] OSCILLATOR CIRCUIT WITH CAP STRUCTURES FOR MILLIMETER-WAVE IMPATT DIODES [J].

MISAWA, T ;

KENYON, ND .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) :969-&

[6] MILLIMETER-WAVE GAAS SCHOTTKY-BARRIER IMPATT DIODES [J].

NAWATA, K ;

IKEDA, M ;

ISHII, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :128-130

[7] NOISE CHARACTERISTICS OF GAAS AND SI IMPATT DIODES FOR 50-GHZ RANGE OPERATION [J].

OKAMOTO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) :558-565

[8]

POTZL VHW, 1978, AEU-INT J ELECTRON C, V32, P229

[9] IMPROVED POLISHING TECHNIQUE FOR GAAS [J].

RIDEOUT, VL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) :1778-&

[10] GAAS 50 GHZ SCHOTTKY-BARRIER IMPATT DIODES [J].

WATANABE, T ;

KODERA, H ;

MIGITAKA, M .

ELECTRONICS LETTERS, 1974, 10 (01) :7-8

← 1 →