DETECTION OF STRUCTURAL DEFECTS IN N-TYPE INP CRYSTALS BY ELECTROCHEMICAL ETCHING UNDER ILLUMINATION

被引：21

作者：

YAMAMOTO, A

TOHNO, S

UEMURA, C

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 05期

关键词：

D O I：

10.1149/1.2127558

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1095 / 1100

页数：6

共 13 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2]

ELLIS AB, 1977, J ELCHEM SO, V124, P1063

[3]

FACTOR MM, 1978, J ELECTROCHEM SOC, V125, P621

[4] ANODIC DISSOLUTION OF HEAVILY DOPED N-TYPE GE IN AQUEOUS SOLUTIONS [J].

GERETH, R ;

COWHER, ME .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) :645-&

[5] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP [J].

HUBER, A ;

LINH, NT .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) :80-84

[6] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF MICRODEFECTS IN DISLOCATION-FREE GAAS AND INP CRYSTALS [J].

KAMEJIMA, T ;

MATSUI, J ;

SEKI, Y ;

WATANABE, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3312-3321

[7] CHARACTERIZATION OF HIGHLY-ZINC-DOPED INP CRYSTALS [J].

MAHAJAN, S ;

BONNER, WA ;

CHIN, AK ;

MILLER, DC .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :165-168

[8]

MEEK RL, 1971, J ELCHEM SO, V118, P427

[9] DEFECT STUDIES OF GAP CRYSTALS PULLED FROM NONSTOICHIOMETRIC MELTS - DISLOCATION AND SAUCER ETCH PITS [J].

ROZGONYI, GA ;

VONNEIDA, AR ;

IIZUKA, T ;

HASZKO, SE .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (07) :3141-&

[10] EFFECTS OF ILLUMINATION ON PREFERENTIAL ETCHING OF N-TYPE GAAS IN A CRO3-HF-AGNO3 SOLUTION [J].

SAITOH, T ;

MATSUBARA, S ;

MINAGAWA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :670-674

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