PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：57

作者：

ZHU, ZQ

TAKEBAYASHI, K

TANAKA, K

EBISUTANI, T

KAWAMATA, J

YAO, T

机构：

[1] Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, 1-4-1, Kagamiyama

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.110878

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the photoluminescence (PL) properties of N-doped ZnSe epilayers grown by molecular-beam epitaxy using a microwave plasma source for N doping. The temperature dependence of PL spectra from N-doped ZnSe epilayers with different net acceptor concentrations is described in detail. The emission due to transition from deep donors to free holes (D(d)F) is observed from highly N-doped ZnSe epilayers at high temperatures, which gives a direct evidence for the formation of a deep N-associated donor. The ionization energy for a deep N-associated donor is estimated as 55+/-5 meV from comparison of the temperature dependence of the D(d)F emission energy with that of the free exciton energy.

引用

页码：91 / 93

页数：3

共 13 条

[1]

AUKSSON IS, 1992, APPL PHYS LETT, V61, P2208

[2] INJECTION ELECTROLUMINESCENCE IN ZNS + ZNSE [J].