P-TYPE ZNSE-N PREPARED BY ELECTRON-CYCLOTRON RESONANCE RADICAL BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：28

作者：

OHTSUKA, T

HORIE, K

机构：

[1] Central Research & Development Center, Victor Company of Japan Ltd., Yokosuka, 239

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 2B期

关键词：

ZNSE; P-TYPE; ECR PLASMA; PHOTOLUMINESCENCE; C-V MEASUREMENT;

D O I：

10.1143/JJAP.32.L233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe doped with nitrogen(N) has been prepared by molecular beam epitaxy using N2*, N* nitrogen radicals, N2+ ions and N atoms from an electron cyclotron resonance nitrogen plasma source. N-doped ZnSe/GaAs heteroepitaxial layers showed p-type conduction with net acceptor concentrations as high as 1.8 x 10(18) cm-3, and the activation rate of N atoms was 60%. Photoluminescence spectra measured at 7 K from p-type ZnSe:N layers with net acceptor concentrations higher than 10(18) cm-3 were dominated by two different donor-acceptor pair emission bands with zero phonon energies of 2.684 eV and 2.697 eV.

引用

页码：L233 / L235

页数：3

共 13 条

[1] ELECTROLUMINESCENCE IN AN OXYGEN-DOPED ZNSE P-N-JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY
AKIMOTO, K
MIYAJIMA, T
MORI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04): : L531 - L534
[2] GROWTH OF PARA-TYPE AND NORMAL-TYPE ZNSE BY MOLECULAR-BEAM EPITAXY
CHENG, H
DEPUYDT, JM
POTTS, JE
HAASE, MA
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 512 - 516
[3] ELECTRICAL CHARACTERIZATION OF P-TYPE ZNSE
DEPUYDT, JM
HAASE, MA
CHENG, H
POTTS, JE
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (11) : 1103 - 1105
[4] PLASMA DOPING OF NITROGEN IN ZNSE USING ELECTRON-CYCLOTRON RESONANCE
ITO, S
IKEDA, M
AKIMOTO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (9B): : L1316 - L1318
[5] P-TYPE CONDUCTION IN ZNSE GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE
NISHIZAWA, J
SUZUKI, R
OKUNO, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2256 - 2258
[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF P-TYPE AND N-TYPE ZNSE HOMOEPITAXIAL LAYERS
OHKAWA, K
UENO, A
MITSUYU, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 375 - 384
[7] CHARACTERISTICS OF P-TYPE ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH RADICAL DOPING
OHKAWA, K
KARASAWA, T
MITSUYU, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2A): : L152 - L155
[8] P-TYPE ZNSE BY NITROGEN ATOM BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
PARK, RM
TROFFER, MB
ROULEAU, CM
DEPUYDT, JM
HAASE, MA
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2127 - 2129
[9] PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
PARK, RM
MAR, HA
SALANSKY, NM
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 1047 - 1049
[10] QIU J, 1991, APPL PHYS LETT, V59, P1896

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