IDEAL GAP SURFACE-BARRIER DIODES

被引：18

作者：

GOLDBERG, YA

POSSE, EA

TSARENKOV, BV

机构：

来源：

ELECTRONICS LETTERS | 1971年 / 7卷 / 20期

关键词：

D O I：

10.1049/el:19710406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：601 / +

页数：1

共 12 条

[1] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[2] GALLIUM PHOSPHIDE-GOLD SURFACE BARRIER [J].

COWLEY, M ;

HEFFNER, H .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) :255-&

[3]

GOLDBERG YA, 1971, PRIB TEKH EKSP, P207

[4] PROPERTIES OF GAP SCHOTTKY BARRIER DIODES AT ELEVATED TEMPERATURES [J].

NANNICHI, Y ;

PEARSON, GL .

SOLID-STATE ELECTRONICS, 1969, 12 (05) :341-&

[5] MEASUREMENT OF DOPING PROFILES IN THICK EPITAXIAL LAYERS OF GAP USING SCHOTTKY BARRIER C-V DATA [J].

PEAKER, AR .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1407-&

[6] PHYSICS OF SCHOTTKY BARRIERS [J].

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (08) :1153-+

[7] Simplified and advanced Theory of the Boundary Layer Rectifiers [J].

Schottky, W. .

ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10) :539-592

[8] NEAR IDEAL AU-GAP SCHOTTKY DIODES [J].

SMITH, BL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4675-&

[9] RANGE-ENERGY RELATION OF HOT ELECTRONS IN GOLD [J].

SZE, SM ;

MOLL, JL ;

SUGANO, T .

SOLID-STATE ELECTRONICS, 1964, 7 (07) :509-523

[10] GAP SURFACE-BARRIER DIODES [J].

WHITE, HG ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) :1990-&

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