XPS MEASUREMENT OF GAAS-ALAS HETEROJUNCTION BAND DISCONTINUITIES - GROWTH SEQUENCE DEPENDENCE

[1] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[3] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[4] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330

[5] Esaki L., 1976, Critical Reviews in Solid State Sciences, V6, P195, DOI 10.1080/10408437608243555

[6] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1620 - 1623

[7] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J]. ELECTRONICS LETTERS, 1980, 16 (19) : 753 - 754

[8] SELF-CONSISTENT CALCULATIONS OF INTERFACE STATES AND ELECTRONIC-STRUCTURE OF (110) INTERFACES OF GE-GAAS AND ALAS-GAAS [J]. PHYSICAL REVIEW B, 1978, 17 (02) : 815 - 828

[9] SEMICONDUCTOR HETEROJUNCTION INTERFACES - NONTRANSITIVITY OF ENERGY-BAND DISCONTINUITIES [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1686 - 1689

[1] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[3] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[4] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330

[5] Esaki L., 1976, Critical Reviews in Solid State Sciences, V6, P195, DOI 10.1080/10408437608243555

[6] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1620 - 1623

[7] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J]. ELECTRONICS LETTERS, 1980, 16 (19) : 753 - 754

[8] SELF-CONSISTENT CALCULATIONS OF INTERFACE STATES AND ELECTRONIC-STRUCTURE OF (110) INTERFACES OF GE-GAAS AND ALAS-GAAS [J]. PHYSICAL REVIEW B, 1978, 17 (02) : 815 - 828

[9] SEMICONDUCTOR HETEROJUNCTION INTERFACES - NONTRANSITIVITY OF ENERGY-BAND DISCONTINUITIES [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1686 - 1689