A POLYCRYSTALLINE DIAMOND THIN-FILM-BASED HYDROGEN SENSOR

被引：17

作者：

KANG, WP

GURBUZ, Y

DAVIDSON, JL

KERNS, DV

机构：

[1] Department of Applied and Engineering Sciences, Vanderbilt University, Nashville

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 25卷 / 1-3期

关键词：

HYDROGEN SENSORS; POLYCRYSTALLINE DIAMOND; THIN FILMS;

D O I：

10.1016/0925-4005(95)85095-3

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A new microelectronic gas sensor utilizing polycrystalline diamond film in conjunction with a catalytic metal has been developed for hydrogen d etection. The sensor is fabricated in a layered Pd/i-diamond/p-diamond metal-insulator-semiconductor (MIS) Schottky-diode configuration on a tungsten substrate. The performance of the sensor for H-2 detection has been examined in the temperature range 27-300 degrees C. The analysis of the steady-state reaction kinetics has confirmed that the hydrogen adsorption process is responsible for the barrier-height change in the diamond-based MIS Schottky diode. The use of diamond-film technology opens the door to the development of a microelectronic gas sensor that can operate at a wider and higher temperature range than the ones based on present silicon technology.

引用

页码：421 / 425

页数：5

共 12 条

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DAMICO A, 1983, SENSOR ACTUATOR, V3, P349

[2]

DAVIDSON JL, 1993, MAY INT S DIAM SCI T

[3] PERFORMANCE OF CARBON MONOXIDE SENSITIVE MOSFETS WITH METAL-OXIDE SEMICONDUCTOR GATES [J].