SIMULATION OF ELEVATED-TEMPERATURE ALUMINUM METALLIZATION USING SIMBAD

被引：36

作者：

DEW, SK ^{[1
]}

SMY, T ^{[1
]}

BRETT, MJ ^{[1
]}

机构：

[1] CARLETON UNIV,DEPT ELECTR,OTTAWA K1S 5B6,ONTARIO,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 07期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/16.141224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ballistic deposition model, SIMBAD, has been extended to simulate physical vapor deposition onto substrates at elevated temperatures. The model has been expanded to account for the effect of film curvature on surface diffusion. The effects on via coverage and filling have been simulated for aluminum films, and complete planarization of a 1:1 aspect ratio via is predicted for a temperature of 550-degrees-C. Via aspect ratio and sidewall taper can also strongly affect coverage and filling. Biased sputtering has also been incorporated into the model and shows that a primary effect is a substantial reduction in the temperature required to achieve full planarization. However, void formation and substrate damage are problems predicted to occur under some bias sputter conditions.

引用

页码：1599 / 1606

页数：8

共 25 条

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