OBSERVATION OF PHOTOLUMINESCENCE FROM INAS SURFACE QUANTUM-WELLS GROWN ON INP(100) BY MOLECULAR-BEAM EPITAXY

被引：5

作者：

SOBIESIERSKI, Z

CLARK, SA

WILLIAMS, RH

机构：

[1] Department of Physics, University of Wales College of Cardiff, Cardiff, CF1 3TH Wales

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90325-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Photoluminescence (PL) measurements are presented for surface quantum wells consisting of ultra-thin layers of InAs deposited on InP by molecular beam epitaxy. The variation of PL peak energy and intensity, with well width and temperature, clearly indicate that radiative recombination occurs within the InAs layers. Moreover, decreases in the PL emission intensities, coupled with the emergence of higher energy PL components, reflect the oxidation of the InAs surface with time.

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页码：703 / 707

页数：5

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