A THEORETICAL EXPLANATION FOR THE RED ENERGY SHIFT OF A NEWLY DISCOVERED, EXCLUSIVELY ACCEPTOR-ASSOCIATED EMISSION IN GAAS

被引:11
作者
OHNISHI, N [1 ]
MAKITA, Y [1 ]
MORI, M [1 ]
IRIE, K [1 ]
TAKEUCHI, Y [1 ]
SHIGETOMI, S [1 ]
机构
[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
关键词
D O I
10.1063/1.339565
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1833 / 1836
页数:4
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共 20 条
[1]  
[Anonymous], [No title captured]
[2]   CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].
BALDERES.A ;
LIPARI, NO .
PHYSICAL REVIEW B, 1974, 9 (04) :1525-1539
[3]   SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709
[4]  
BALLHAUSEN CJ, 1965, MOL ORBITAL THEORY, P16
[5]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[6]  
Efros A. L., 1984, ELECT PROPERTIES DOP
[7]   LOCAL-STRUCTURE OF HEAVILY ZN+-IMPLANTED GAAS STUDIED BY PHOTOLUMINESCENCE AND FLUORESCENCE EXAFS [J].
KUDO, K ;
MAKITA, Y ;
OYANAGI, H ;
OHNISHI, N ;
NOMURA, T ;
IRIE, K ;
UEHARA, F ;
MITSUHASHI, Y .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :398-402
[8]   NEW EMISSION-LINES IN HIGHLY CARBON ION-IMPLANTED GAAS [J].
MAKITA, Y ;
YOKOTA, M ;
NOMURA, T ;
TANOUE, H ;
TAKAYASU, I ;
KATAOKA, S ;
IZUMI, T ;
MATSUMORI, T .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :433-437
[9]   PHOTOLUMINESCENCE OF MG-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING MG3AS2 AS A MG SOURCE - A COMPARISON WITH MG+ ION-IMPLANTATION [J].
MAKITA, Y ;
TAKEUCHI, Y ;
OHNISHI, N ;
NOMURA, T ;
KUDO, K ;
TANAKA, H ;
LEE, HC ;
MORI, M ;
MITSUHASHI, Y .
APPLIED PHYSICS LETTERS, 1986, 49 (18) :1184-1186
[10]   PHOTOLUMINESCENCE OF VERY DILUTELY C+ ION-IMPLANTED GAAS [J].
MAKITA, Y ;
NOMURA, T ;
YOKOTA, M ;
MATSUMORI, T ;
IZUMI, T ;
TAKEUCHI, Y ;
KUDO, K .
APPLIED PHYSICS LETTERS, 1985, 47 (06) :623-625