REVERSAL OF PRECIPITATION IN HEAVILY DOPED SILICON-GERMANIUM ALLOYS

被引:14
作者
ROWE, DM
SAVVIDES, N
机构
[1] Dept. of Phys., Univ. of Wales, Cardiff, Institute of Science and Technology, Cardiff CFl 3NU
关键词
D O I
10.1088/0022-3727/12/9/024
中图分类号
O59 [应用物理学];
学科分类号
摘要
Preliminary results of an investigation into the reversible nature of precipitation effects in doped silicon-germanium alloys are reported. Alloy specimens were initially annealed at 1300K and then subjected to various heat treatments and the change in their thermoelectric properties with time and temperature measured. Precipitation effects on the thermoelectric properties of these materials are to all intents reversible and this phenomenon offers a possibility of rejuvenating silicon-germanium thermo-elements by judicious heat treatment.
引用
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页码:1613 / 1619
页数:7
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