HARMONIC OPERATION OF GAAS MILLIMETER WAVE TRANSFERRED ELECTRON OSCILLATORS

被引：17

作者：

HAYDL, WH

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 22期

关键词：

D O I：

10.1049/el:19810574

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：825 / 826

页数：2

共 8 条

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BARRERA, JS .

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[2] COMPUTER-SIMULATION OF TRANSFERRED ELECTRON DEVICES USING DISPLACED MAXWELLIAN APPROACH [J].

BOSCH, R ;

THIM, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :16-25

[3] HIGH TRANSFORMATION RATIO FOR IMPEDANCE MATCHING WITH A RADIAL LINE [J].

DORING, KH ;

SEEBALD, E .

ELECTRONICS LETTERS, 1980, 16 (02) :50-51

[4] OPERATING MODES OF MILLIMETER WAVE TRANSFERRED ELECTRON OSCILLATORS [J].

EDDISON, IG ;

BROOKBANKS, DM .

ELECTRONICS LETTERS, 1981, 17 (03) :112-113

[5] RESONANT-CAP STRUCTURES FOR IMPATT DIODES [J].

GROVES, IS ;

LEWIS, DE .

ELECTRONICS LETTERS, 1972, 8 (04) :98-&

[6] 100-GHZ GUNN-DIODES FABRICATED BY MOLECULAR-BEAM EPITAXY [J].

HAYDL, WH ;

SMITH, S ;

BOSCH, R .

APPLIED PHYSICS LETTERS, 1980, 37 (06) :556-557

[7] 50-110 GHZ GUNN-DIODES USING MOLECULAR-BEAM EPITAXY [J].

HAYDL, WH ;

SMITH, RS ;

BOSCH, R .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :224-226

[8] GUNN-DIODE OSCILLATOR AT 95 GHZ [J].

RUTTAN, TG .

ELECTRONICS LETTERS, 1975, 11 (14) :293-294

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