MAGNETOOPTICAL INVESTIGATION OF IMPURITY AND DEFECT LEVELS IN HGCDTE ALLOYS

被引：20

作者：

LITTLER, CL

SEILER, DG

LOLOEE, MR

机构：

[1] NIST,DIV SEMICOND ELECTR,GAITHERSBURG,MD 20899

[2] MICHIGAN STATE UNIV,CTR FUNDAMENTAL MAT RES,DEPT PHYS & ASTRON,E LANSING,MI 48824

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.576974

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have observed and described magneto-optical transitions between impurity/defect levels and conduction band Landau levels for a variety of n-type HgCdTe samples with 0.2 <x < 0.3. The activation energies of these levels fall into two categories: (1) 10–12 meV above the valence band edge, independent of Egand (2) two close spaced levels at ≃0.5 Eg. In addition, the spectra of several narrow gap (Eg≤100 meV) samples exhibit shallower and deeper acceptor-like levels. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1133 / 1138

页数：6

共 33 条

[1]

ANDRUKHIV MG, 1979, SOV PHYS SEMICOND+, V13, P210

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