DEEP ELECTRON TRAPS NEAR THE PASSIVATED INTERFACE OF HGCDTE

被引：12

作者：

COTTON, VA

WILSON, JA

JONES, CE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期

关键词：

D O I：

10.1063/1.336304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2208 / 2211

页数：4

共 11 条

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BUISSON, JP ;

DOW, JD .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :975-976

[2]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P264

[3] MEASUREMENT OF INTERFACE DEFECT STATES AT OXIDIZED SILICON SURFACES BY CONSTANT-CAPACITANCE DLTS [J].

JOHNSON, NM ;

BARTELINK, DJ ;

MCVITTIE, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1407-1411

[4] GENERATION-RECOMBINATION CENTERS IN P-TYPE HG1-XCDXTE [J].

JONES, CE ;

NAIR, V ;

POLLA, DL .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :248-250

[5] ELECTROLYTE ELECTROREFLECTANCE STUDY OF THE EFFECTS OF ANODIZATION AND OF CHEMOMECHANICAL POLISH ON HG1-XCDXTE [J].

LASTRASMARTINEZ, A ;

LEE, U ;

ZEHNDER, J ;

RACCAH, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :157-160

[6] DEEP LEVEL STUDIES OF HG1-XCDXTE .2. CORRELATION WITH PHOTO-DIODE PERFORMANCE [J].

POLLA, DL ;

REINE, MB ;

JONES, CE .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5132-5138

[7] DEEP LEVEL STUDIES OF HG1-XCDXTE .1. NARROW-BAND-GAP SPACE-CHARGE SPECTROSCOPY [J].

POLLA, DL ;

JONES, CE .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5118-5131

[8] EVIDENCE OF STRESS-MEDIATED HG MIGRATION IN HG1-XCDXTE [J].

RACCAH, PM ;

LEE, U ;

SILBERMAN, JA ;

SPICER, WE ;

WILSON, JA .

APPLIED PHYSICS LETTERS, 1983, 42 (04) :374-376

[9] TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES [J].

SCHULZ, M ;

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :622-625

[10] TRANSIENT CAPACITANCE MEASUREMENTS OF INTERFACE STATES ON THE INTENTIONALLY CONTAMINATED SI-SIO2 INTERFACE [J].

SCHULZ, M ;

KLAUSMANN, E .

APPLIED PHYSICS, 1979, 18 (02) :169-175

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