DESIGN CONSIDERATIONS FOR HIGH-POWER GTOS

[1] HIGH-POWER GATE TURN-OFF THYRISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 275 - 281

[2] AZUMA M, 1979 IEEE INT EL DEV, P246

[3] BECKE HW, 1975 IEEE POW EL SPE, P292

[4] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) : 455 - &

[5] KISHI K, 1977 IEEE POW EL SPE, P268

[6] POTENTIAL AND CARRIER DISTRIBUTIONS OF A P-N-P-N DEVICE IN ON STATE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1389 - &

[7] KURATA M, 1974 IEEE POW EL SPE, P125

[8] NAGANO T, 1978 IND APPL SOC, P1003

[9] HIGH POWER GATE-CONTROLLED SWITCH [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 706 - +

[10] OHASHI H, 1980, APR M IEE JAP TOK, P492

[1] HIGH-POWER GATE TURN-OFF THYRISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 275 - 281

[2] AZUMA M, 1979 IEEE INT EL DEV, P246

[3] BECKE HW, 1975 IEEE POW EL SPE, P292

[4] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) : 455 - &

[5] KISHI K, 1977 IEEE POW EL SPE, P268

[6] POTENTIAL AND CARRIER DISTRIBUTIONS OF A P-N-P-N DEVICE IN ON STATE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1389 - &

[7] KURATA M, 1974 IEEE POW EL SPE, P125

[8] NAGANO T, 1978 IND APPL SOC, P1003

[9] HIGH POWER GATE-CONTROLLED SWITCH [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 706 - +

[10] OHASHI H, 1980, APR M IEE JAP TOK, P492