DRY-ETCHING OF VIA CONNECTIONS FOR INP POWER DEVICES

被引:22
作者
CONSTANTINE, C
BARRATT, C
PEARTON, SJ
REN, F
LOTHIAN, JR
HOBSON, WS
KATZ, A
YANG, LW
CHAO, PC
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] GE CO,ELECTR LAB,SYRACUSE,NY 13221
关键词
ETCHING TECHNIQUES;
D O I
10.1049/el:19930655
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Through-wafer vias fabricated in InP substrates using high-rate (greater-than-or-equal-to 1 mum min-1) dry etching in an electron cyclotron resonance (ECR) Cl2/CH4/H-2/Ar discharge at 150-degrees-C are reported. The low process pressure (approximately 2 mtorr) enables creation of small diameter (30 mum) vias using photoresist masks, and the anisotropic profiles are suitable for Au plating to complete the electrical front-to-back connection.
引用
收藏
页码:984 / 986
页数:3
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