ELECTRONIC-STRUCTURE OF PERIODICALLY DELTA-DOPED GAAS-SI

被引：16

作者：

CHICO, L

GARCIAMOLINER, F

VELASCO, VR

机构：

[1] Instituto de Ciencia de Materiales, Consejo Superior de Investigaciones Científicas, 28006 Madrid

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.48.11427

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of periodically doped GaAs:Si systems has been self-consistently calculated with a Hedin-Lundqvist local-density functional for exchange and correlation. The influence of the periodic spacing d, the areal impurity concentration N(d), and the spread of the impurity distribution have been investigated. Miniband widths and gaps, potential-well depths, and Fermi-level position have been studied between d = 100 and 500 angstrom, thus following the transition from superlattice behavior to independent well regime. The results are used to interpret some observed photoluminescence spectra.

引用

页码：11427 / 11430

页数：4

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