MORPHOLOGY AND GROWTH-PROCESS OF THERMALLY-INDUCED OXIDE PRECIPITATES IN CZOCHRALSKI SILICON

被引：93

作者：

SUEOKA, K

IKEDA, N

YAMAMOTO, T

KOBAYASHI, S

机构：

[1] Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd., Amagasaki 660

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.354254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The morphology and growth process of oxide precipitates in Czochralski silicon have been studied with prolonged thermal treatments up to 700 h at intermediate temperatures (700-900-degrees-C). It was found with transmission electron microscopy observation that (i) the morphology of precipitates changes from platelet to aggregation of polyhedra at both 800 and 900-degrees-C during isothermal heat treatment, and (ii) the growth of platelet precipitates follows a t1/2 law.

引用

收藏

页码：5437 / 5444

页数：8

相关论文

共 25 条

[1] INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES [J].

BENDER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01) :245-261

[2] A STUDY OF OXYGEN PRECIPITATION IN SILICON USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, SMALL-ANGLE NEUTRON-SCATTERING AND INFRARED-ABSORPTION [J].

BERGHOLZ, W ;

BINNS, MJ ;

BOOKER, GR ;

HUTCHISON, JC ;

KINDER, SH ;

MESSOLORAS, S ;

NEWMAN, RC ;

STEWART, RJ ;

WILKES, JG .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 59 (05) :499-522

[3]

BERGHOLZ W, 1986, ELECTROCHEMICAL SOC, V864, P874

[4] GOLD DIFFUSION IN SILICON BY RAPID OPTICAL ANNEALING - A NEW INSIGHT INTO GOLD AND SILICON INTERSTITIAL KINETICS [J].

BOIT, C ;

LAU, F ;

SITTIG, R .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (02) :197-205

[5] GETTERING OF GOLD IN SILICON - A TOOL FOR UNDERSTANDING THE PROPERTIES OF SILICON INTERSTITIALS [J].

BRONNER, GB ;

PLUMMER, JD .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (12) :5286-5298

[6]

Christian J. W., 1975, THEORY TRANSFORMATIO, P525

[7]

CRAVEN RA, 1981, ELECTROCHEMICAL SOC, V815, P254

[8] THE SOLUBILITY OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) :214-216

[9] GROWTH LAW FOR DISK PRECIPITATES, AND OXYGEN PRECIPITATION IN SILICON [J].

HU, SM .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :115-117

[10]

Inoue N., 1979, Oyo Buturi, V48, P1126