ELEVATED PRESSURE STUDY OF EFFECT OF DIFFERENT DONORS ON ELECTRON TRANSFER IN N-GAAS

被引：10

作者：

ADLER, PN

机构：

[1] Bayside Laboratory, Research Center of General Telephone, Electronics Laboratories, Bayside

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.1658237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The elevated-pressure resistance behavior of differently doped samples suggests that the ratio of mobility in the [000] conduction band to that in the [100] band is constant and independent of initial mobility. A mobility ratio of 39 is indicated at atmospheric pressure. Carrier freeze-out with respect to the [100] band was observed for S- and Si-doped samples but not with Se and Te. © 1969 The American Institute of Physics.

引用

页码：3554 / &

共 10 条

[1] ADLER PN, UNPUBLISHED
[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P134
[3] HIGH-FIELD TRANSPORT IN N-TYPE GAAS
CONWELL, EM
VASSELL, MO
[J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +
[4] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS
EHRENREICH, H
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963
[5] EFFECTS OF HIGH PRESSURE UNIAXIAL STRESS AND TEMPERATURE ON ELECTRICAL RESISTIVITY OF N-GAAS
HUTSON, AR
JAYARAMA.A
CORIELL, AS
[J]. PHYSICAL REVIEW, 1967, 155 (03): : 786 - &
[6] CONDUCTION-BAND STRUCTURE OF GASB FROM PRESSURE EXPERIMENTS TO 50 KBAR
KOSICKI, BB
JAYARAMAN, A
PAUL, W
[J]. PHYSICAL REVIEW, 1968, 172 (03): : 764 - +
[7] SULFUR DONOR LEVEL ASSOCIATED WITH (100) CONDUCTION BAND OF GASB
KOSICKI, BB
PAUL, W
STRAUSS, AJ
ISELER, GW
[J]. PHYSICAL REVIEW LETTERS, 1966, 17 (23) : 1175 - &
[8] INTERBAND CARRIER TRANSFER IN GAAS AT HIGH PRESSURES
LEES, J
WASSE, MP
KING, G
[J]. SOLID STATE COMMUNICATIONS, 1967, 5 (07) : 521 - &
[9] HALL-EFFECT MEASUREMENTS OF N-TYPE GALLIUM PHOSPHIDE
MONTGOME.HC
FELDMANN, WL
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3228 - &
[10] EFFECT OF PRESSURE ON GUNN PHENOMENA IN GALLIUM ARSENIDE
WASSE, MP
LEES, J
KING, G
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (06) : 601 - &

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