INAS GA1-XINXSB STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：30

作者：

CHOW, DH ^{[1
]}

MILES, RH ^{[1
]}

SODERSTROM, JR ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：710 / 714

页数：5

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