共 11 条
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ELIMINATION OF THE FLUX TRANSIENTS FROM MOLECULAR-BEAM EPITAXY SOURCE CELLS FOLLOWING SHUTTER OPERATION
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
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EFFECTS OF KIKUCHI SCATTERING ON REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITIES DURING MOLECULAR-BEAM EPITAXY GAAS GROWTH
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1989, 7 (04)
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REPRODUCIBLE GROWTH-CONDITIONS BY GROUP-III AND GROUP-V CONTROLLED INCORPORATION RATE MEASUREMENTS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1988, 6 (02)
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DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1983, 31 (01)
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INTENSITY OSCILLATIONS FOR ELECTRON-BEAMS REFLECTED DURING EPITAXIAL-GROWTH OF METALS
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RESH JS, 1989, PHYS REV B, V40, P799
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DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (03)
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THE GROWTH OF STRAINED INGAAS ON GAAS - KINETICS VERSUS ENERGETICS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1988, 6 (02)
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