MULTIPLE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION BEAM INTENSITY MEASUREMENT SYSTEM

被引:6
作者
RESH, JS
JAMISON, KD
STROZIER, J
IGNATIEV, A
机构
关键词
D O I
10.1063/1.1141492
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A video-based analysis system for reflection high-energy electron diffraction (RHEED) is described which simultaneously measures the intensities and profiles of multiple diffraction beams. This system is used to record real-time RHEED intensity oscillations for layer-by-layer epitaxial growth. Fast Fourier transform analysis of the oscillation data is used to directly determine the growth rate and to accurately obtain phase information about the oscillations. This system is demonstrated and compared to other methods of recording RHEED oscillation data.
引用
收藏
页码:771 / 774
页数:4
相关论文
共 11 条
[1]  
BOLGER B, 1986, REV SCI INSTRUM, V57, P1363, DOI 10.1063/1.1138601
[2]   ELIMINATION OF THE FLUX TRANSIENTS FROM MOLECULAR-BEAM EPITAXY SOURCE CELLS FOLLOWING SHUTTER OPERATION [J].
CHILTON, PA ;
TRUSCOTT, WS ;
WEN, YF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1099-1104
[3]   EFFECTS OF KIKUCHI SCATTERING ON REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITIES DURING MOLECULAR-BEAM EPITAXY GAAS GROWTH [J].
CROOK, GE ;
EYINK, KG ;
CAMPBELL, AC ;
HINSON, DR ;
STREETMAN, BG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2549-2553
[4]   CURRENT UNDERSTANDING AND APPLICATIONS OF THE RHEED INTENSITY OSCILLATION TECHNIQUE [J].
DOBSON, PJ ;
JOYCE, BA ;
NEAVE, JH ;
ZHANG, J .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :1-8
[5]   REPRODUCIBLE GROWTH-CONDITIONS BY GROUP-III AND GROUP-V CONTROLLED INCORPORATION RATE MEASUREMENTS [J].
FERNANDEZ, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :745-748
[6]   DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].
NEAVE, JH ;
JOYCE, BA ;
DOBSON, PJ ;
NORTON, N .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8
[7]   INTENSITY OSCILLATIONS FOR ELECTRON-BEAMS REFLECTED DURING EPITAXIAL-GROWTH OF METALS [J].
PURCELL, ST ;
HEINRICH, B ;
ARROTT, AS .
PHYSICAL REVIEW B, 1987, 35 (12) :6458-6460
[8]  
RESH JS, 1989, PHYS REV B, V40, P799
[9]   DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE [J].
VANHOVE, JM ;
LENT, CS ;
PUKITE, PR ;
COHEN, PI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :741-746
[10]   THE GROWTH OF STRAINED INGAAS ON GAAS - KINETICS VERSUS ENERGETICS [J].
WHALEY, GJ ;
COHEN, PI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :625-626