共 17 条
[1]
A STUDY OF STRAIN-RELATED EFFECTS IN THE MOLECULAR-BEAM EPITAXY GROWTH OF INXGA1-XAS ON GAAS USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:1162-1166
[2]
SURFACE STOICHIOMETRY AND MORPHOLOGY OF MBE GROWN (001)GAAS THROUGH THE ANALYSIS OF RHEED OSCILLATIONS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1985, 24 (06)
:L478-L480
[3]
APPLICATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TO THIN-FILM GROWTH AND CHARACTERIZATION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1987, 5 (04)
:2027-2028
[4]
COHEN PI, 1987, THIN FILM GROWTH TEC
[5]
COWLEY JM, 1981, DIFFRACTION PHYSICS, P315
[6]
REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF PRINCIPAL STREAK INTENSITY PROFILES AND ADATOM COVERAGE OF (100) GAAS GROWN BY MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1988, 6 (02)
:749-753
[7]
SURFACE DISORDER INDUCED KIKUCHI FEATURES IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION PATTERNS OF STATIC AND GROWING GAAS(001) FILMS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1987, 5 (04)
:611-614
[9]
REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (05)
:1317-1322
[10]
BAFFLE-FREE REFRACTORY DIMER ARSENIC SOURCE FOR MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1988, 6 (06)
:1667-1670