QUANTITATIVE ASPECTS OF TUNNELING RESISTANCE IN N-GAAS SCHOTTKY BARRIERS

被引：14

作者：

GUETIN, P

SCHREDER, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 13期

关键词：

D O I：

10.1063/1.1660000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5689 / &

共 17 条

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[4]

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EHRENREICH, H .

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[7] TUNNELING IN PB/N-GAAS JUNCTIONS UNDER HYDROSTATIC PRESSURE [J].

GUETIN, P ;

SCHREDER, G .

SOLID STATE COMMUNICATIONS, 1971, 9 (09) :591-&

[8] PHONON STRUCTURES IN METAL-SEMICONDUCTOR TUNNEL JUNCTIONS [J].

GUETIN, P ;

SCHREDER, G .

SOLID STATE COMMUNICATIONS, 1970, 8 (04) :291-&

[9] BAND-STRUCTURE EFFECTS IN METAL-GASB TUNNEL CONTACTS UNDER PRESSURE [J].

GUETIN, P ;

SCHREDER, G .

PHYSICAL REVIEW LETTERS, 1971, 27 (06) :326-&

[10]

GUETIN P, TO BE PUBLISHED

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