QUANTITATIVE ASPECTS OF TUNNELING RESISTANCE IN N-GAAS SCHOTTKY BARRIERS

被引：14

作者：

GUETIN, P

SCHREDER, G

机构：

来源：

关键词：

D O I：

10.1063/1.1660000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5689 / &

共 17 条

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MILLEA, MF ;

MCCOLL, M .

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PADOVANI, FA ;

STRATTON, R .

[14] BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J].

SPITZER, WG ;

MEAD, CA .

[15] DIFFERENTIAL RESISTANCE PEAKS OF SCHOTTKY BARRIER DIODES [J].

STRATTON, R ;

PADOVANI, FA .

[16] ELECTRON-PHONON COUPLING IN BARRIERS OF GAAS SCHOTTKY DIODES [J].

THOMAS, P ;

QUEISSER, HJ .

PHYSICAL REVIEW, 1968, 175 (03) :983-&

TSUI, DC .