PHONON STRUCTURES IN METAL-SEMICONDUCTOR TUNNEL JUNCTIONS

被引:6
作者
GUETIN, P
SCHREDER, G
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D O I
10.1016/0038-1098(70)90649-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:291 / &
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[1]   THEORY OF TUNNELING SPECTROSCOPY OF COLLECTIVE EXCITATIONS [J].
BENNETT, AJ ;
DUKE, CB ;
SILVERSTEIN, SD .
PHYSICAL REVIEW, 1968, 176 (03) :969-+
[2]  
CARRUTHERS T, 1969, B AM PHYS SOC, V14, P413
[3]   TUNNELING MEASUREMENT OF ELECTRON-PLASMON INTERACTION IN DEGENERATE SEMICONDUCTORS [J].
DUKE, CB ;
RICE, MJ ;
STEINRIS.F .
PHYSICAL REVIEW, 1969, 181 (02) :733-&
[4]   TUNNELING MEASUREMENT OF PHONON SPECTRUM IN GRANULAR A1 [J].
KLEIN, J ;
LEGER, A .
PHYSICS LETTERS A, 1968, A 28 (02) :134-&
[5]  
KLEIN J, PRIVATE COMMUNICATIO
[6]   TUNNELING IN METAL-GLASS-SILICON STRUCTURES [J].
LAIBOWIT.RB .
APPLIED PHYSICS LETTERS, 1968, 13 (07) :221-&
[7]  
MIKKOR M, 1969 C TUNN MAIN
[8]   THEORY OF INELASTIC ELECTRON-SURFACE-PLASMON INTERACTIONS IN METAL-SEMICONDUCTOR TUNNEL JUNCTIONS [J].
NGAI, KL ;
ECONOMOU, EN ;
COHEN, MH .
PHYSICAL REVIEW LETTERS, 1969, 22 (25) :1375-&
[9]   PHONON EMISSION AND SELF-ENERGY EFFECTS IN NORMAL-METAL TUNNELING [J].
ROWELL, JM ;
MCMILLAN, WL ;
FELDMANN, WL .
PHYSICAL REVIEW, 1969, 180 (03) :658-&
[10]   ELECTRON-PHONON COUPLING IN BARRIERS OF GAAS SCHOTTKY DIODES [J].
THOMAS, P ;
QUEISSER, HJ .
PHYSICAL REVIEW, 1968, 175 (03) :983-&