GROUNDED BODY SOI(GBSOI) NMOSFET BY WAFER BONDING

被引：3

作者：

KANG, WG

LYU, JS

KANG, SW

LEE, KR

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECTR MAT ENGN,TAEJON 305701,SOUTH KOREA

[2] KOREA ADV INST SCI & TECHNOL,DEPT ELECTR ENGN,TAEJON 305701,SOUTH KOREA

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 01期

关键词：

D O I：

10.1109/55.363218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated a grounded body silicon-on-insulator (GBSOI) nMOSFET by wafer bonding and etch back technology. The GBSOI has all the inherent advantages of SOI such as speed and radiation hardness, while such problems as the low breakdown voltage and kink effect are completely solved due to the p(+) polysilicon grounded body. It also has high packing density because several SOI bodies and the ground line are connected via the pi polysilicon layer buried under the channel region.

引用

页码：2 / 4

页数：3

共 10 条

[1] DEGRADATION IN THIN-FILM SOI MOSFETS CAUSED BY SINGLE-TRANSISTOR LATCH [J].