MEASUREMENTS AND MODELING OF THIN SILICON DIOXIDE FILMS ON SILICON

被引：77

作者：

KALNITSKY, A ^{[1
]}

TAY, SP ^{[1
]}

ELLUL, JP ^{[1
]}

CHONGSAWANGVIROD, S ^{[1
]}

ANDREWS, JW ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT CHEM,CHAPEL HILL,NC 27599

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 01期

关键词：

D O I：

10.1149/1.2086373

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The ellipsometric measurement of refractive indexes for films less than 50 nm thick is of dubious quality due to the significance of the size of random errors relative to the accuracy required to extract reliable index values from the measurements. In this study the various errors are quantitatively assessed as a function of the film thickness, and then compared with experimental data obtained from differently prepared silicon dioxide films on silicon. The new results confirm previous work that shows higher refractive indexes for thinner films. Transmission electron microscopy confirms the results. Graded and discrete layer models are compared. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：234 / 238

页数：5

共 13 条

[1] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].