THERMAL AND CHEMICAL-STABILITY OF SE-PASSIVATED GAAS-SURFACES

被引：30

作者：

TURCO, FS

SANDROFF, CJ

HEDGE, MS

TAMARGO, MC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：856 / 859

页数：4

相关论文

共 19 条

[1] BESSER R, 1989, FEB PCSI C BOS
[2] COMPARISON OF SURFACE-PROPERTIES OF SODIUM SULFIDE AND AMMONIUM SULFIDE PASSIVATION OF GAAS
BESSER, RS
HELMS, CR
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) : 4306 - 4310
[3] BRIGGS D, 1983, PRACTICAL SURFACE AN
[4] UNPINNED GALLIUM OXIDE GAAS INTERFACE BY HYDROGEN AND NITROGEN SURFACE PLASMA TREATMENT
CALLEGARI, A
HOH, PD
BUCHANAN, DA
LACEY, D
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (04) : 332 - 334
[5] SCHOTTKY-BARRIER FORMATION ON (NH4)2S-TREATED N-TYPE AND P-TYPE (100)GAAS
CARPENTER, MS
MELLOCH, MR
DUNGAN, TE
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (01) : 66 - 68
[6] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES
CHO, AY
[J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317
[7] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY ON (NH4)2SX-TREATED GAAS (100) SURFACES
HIRAYAMA, H
MATSUMOTO, Y
OIGAWA, H
NANNICHI, Y
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (25) : 2565 - 2567
[8] ZNSE/GAAS HETEROINTERFACE STABILIZATION BY HIGH-TEMPERATURE SE TREATMENT OF GAAS SURFACE
KOBAYASHI, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09): : L1597 - L1599
[9] SURFACE PASSIVATION OF GAAS
LEE, HH
RACICOT, RJ
LEE, SH
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (08) : 724 - 726
[10] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF GAAS SURFACE-STATES TREATED WITH INORGANIC SULFIDES
LIU, D
ZHANG, T
LARUE, RA
HARRIS, JS
SIGMON, TW
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1059 - 1061