CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-SILICON USING TETRASILANE

被引：22

作者：

KANOH, H ^{[1
]}

SUGIURA, O ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS EDUC,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6A期

关键词：

TETRASILANE; TRISILANE; DISILANE; CHEMICAL VAPOR DEPOSITION; AMORPHOUS SILICON; THIN FILM TRANSISTOR;

D O I：

10.1143/JJAP.32.2613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous-silicon films have been deposited by the plasma-free chemical-vapor-deposition method using tetrasilane (Si4H10) at temperatures as low as 350-degrees-C. The film deposited at 350-degrees-C and 9 Torr had hydrogen content as high as 15 at. %, optical bandgap of 1.78 eV, logarithmic ratio of photoconductivity (at a light intensity of 100 mW/cm2 under AM1 conditions) to dark conductivity of 3.2, activation energy of 0.78 eV and the Urbach tail slope as small as 56 meV. Thin-film transistors have been fabricated using the film deposited at 350-degrees-C. The electron mobility was 0.6 cm2/V s under as-deposited conditions.

引用

页码：2613 / 2619

页数：7

共 33 条

[1]

ADAMS AC, 1988, VLSI TECHNOLOGY, P268

[2]

ADAMS AC, 1988, VLSI TECHNOLOGY, P238

[3]

AHM BC, 1991, 1991 C REC INT DISPL, P85

[4] ELECTRONIC AND OPTICAL-PROPERTIES OF AMORPHOUS SI-H FILMS DEPOSITED BY CHEMICAL VAPOR-DEPOSITION [J].

AKHTAR, M ;

DALAL, VL ;

RAMAPRASAD, KR ;

GAU, S ;

CAMBRIDGE, JA .

APPLIED PHYSICS LETTERS, 1982, 41 (12) :1146-1148

[5]

ANN BC, 1991, JPN J APPL PHYS, V30, P3639

[6] CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FROM DISILANE [J].

BOGAERT, RJ ;

RUSSELL, TWF ;

KLEIN, MT ;

ROCHELEAU, RE ;

BARON, BN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (10) :2960-2968

[7] A-SI-H TFTS USING LOW-TEMPERATURE CVD OF SI3H8 [J].

BREDDELS, PA ;

KANOH, H ;

SUGIURA, O ;

MATSUMURA, M .

ELECTRONICS LETTERS, 1989, 25 (24) :1637-1638

[8] AMORPHOUS-SILICON THIN-FILM TRANSISTORS USING CHEMICAL VAPOR-DEPOSITION OF DISILANE [J].

BREDDELS, PA ;

KANOH, H ;

SUGIURA, O ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10) :L1750-L1752

[9] CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON WITH SILANES FOR THIN-FILM TRANSISTORS - THE INFLUENCE OF THE AMORPHOUS-SILICON DEPOSITION TEMPERATURE [J].

BREDDELS, PA ;

KANOH, H ;

SUGIURA, O ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (02) :233-239

[10]

CARLSON DE, 1977, RCA REV, V38, P211

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