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- [1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &ANDERSON, RL
- [2] STRUCTURAL CHARACTERIZATION OF THE SI(111)-CAF2 INTERFACE BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY - REPLY[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (19) : 2275 - 2275BATSTONE, JLPHILLIPS, JM
- [3] EVIDENCE FOR THE INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON ELECTRICAL-PROPERTIES AT THE EPITAXIAL CAF2/SI(111) INTERFACE[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (14) : 1394 - 1397BATSTONE, JLPHILLIPS, JMHUNKE, EC
- [4] SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - DIFFUSION PARAMETERS AND BEHAVIOR AT ELEVATED-TEMPERATURES[J]. PHYSICAL REVIEW B, 1987, 35 (02): : 634 - 640CHAMBERS, SAHILL, DMXU, FWEAVER, JH
- [5] SIMILARITY BETWEEN THE SI(111)-(7 X 7) AND IMPURITY-STABILIZED SI(111)-(1 X 1) SURFACES[J]. SOLID STATE COMMUNICATIONS, 1980, 35 (04) : 345 - 347EASTMAN, DEHIMPSEL, FJVANDERVEEN, JF
- [6] DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES[J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7014 - 7018HIMPSEL, FJHOLLINGER, GPOLLAK, RA
- [7] STRUCTURE AND BONDING AT THE CAF2/SI (111) INTERFACE[J]. APPLIED PHYSICS LETTERS, 1986, 48 (09) : 596 - 598HIMPSEL, FJHILLEBRECHT, FUHUGHES, GJORDAN, JLKARLSSON, UOMCFEELY, FRMORAR, JFRIEGER, D
- [8] DETERMINATION OF INTERFACE STATES FOR CAF2/SI(111) FROM NEAR-EDGE X-RAY-ABSORPTION MEASUREMENTS[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (14) : 1497 - 1500HIMPSEL, FJKARLSSON, UOMORAR, JFRIEGER, DYARMOFF, JA
- [9] BONDING AT THE CAF2 SI(111) INTERFACE FROM TIGHT-BINDING CLUSTER AND BAND THEORY[J]. PHYSICAL REVIEW B, 1988, 38 (12): : 8264 - 8268NATH, KANDERSON, AB
- [10] PHOTOEMISSION-STUDY OF BONDING AT THE CAF2-ON-SI(111) INTERFACE[J]. PHYSICAL REVIEW B, 1987, 35 (14): : 7526 - 7532OLMSTEAD, MAUHRBERG, RIGBRINGANS, RDBACHRACH, RZ