RESOLVED SPLITTING OF THE FREE EXCITON LUMINESCENCE BAND IN SILICON

被引：5

作者：

PARSONS, RR

ZIEMELIS, UO

ROSTWOROWSKI, JA

机构：

[1] Physics Department, The University of British Columbia, Vancouver

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/0038-1098(79)90522-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5 / 7

页数：3

共 13 条

[1] SPLITTING OF 1S-EXCITONS IN SILICON [J].

BALSLEV, I .

SOLID STATE COMMUNICATIONS, 1977, 23 (04) :205-206

[2] DETERMINATION OF MASS-ANISOTROPY EXCITON SPLITTING IN SILICON [J].

CAPIZZI, M ;

MERLE, JC ;

FIORINI, P ;

FROVA, A .

SOLID STATE COMMUNICATIONS, 1977, 24 (07) :451-455

[3]

CAPIZZI M, 1976, 13TH P INT C PHYS SE, P857

[4] ANALYSIS OF LO AND TO PHONON ASSISTED FREE EXCITON LUMINESCENCE IN SILICON [J].

HAMMOND, RB ;

SILVER, RN .

SOLID STATE COMMUNICATIONS, 1978, 28 (12) :993-996

[5] TEMPERATURE-DEPENDENCE OF SILICON LUMINESCENCE DUE TO SPLITTING OF INDIRECT GROUND-STATE [J].

HAMMOND, RB ;

SMITH, DL ;

MCGILL, TC .

PHYSICAL REVIEW LETTERS, 1975, 35 (22) :1535-1538

[6]

LIPARI NO, 1978, APS B, V23, P426

[7] EXCITON ENERGY LEVELS IN GERMANIUM AND SILICON [J].

MCLEAN, TP ;

LOUDON, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (1-2) :1-9

[8] UNIAXIALLY STRESSED SILICON - FINE-STRUCTURE OF EXCITON AND DEFORMATION POTENTIALS [J].

MERLE, JC ;

CAPIZZI, M ;

FIORINI, P ;

FROVA, A .

PHYSICAL REVIEW B, 1978, 17 (12) :4821-4834

[9] TEMPERATURE-DEPENDENCE OF RELATIVE INTEGRATED-INTENSITIES OF SYMMETRY-ALLOWED PHONON-ASSISTED EXCITON EMISSION IN SI AND GE [J].

SMITH, DL ;

MCGILL, TC .

PHYSICAL REVIEW B, 1976, 14 (06) :2448-2455

[10]

SMITH DL, 1976, 13TH P INT C PHYS SE, P1077

← 1 2 →