XPS AND SIMS/SNMS MEASUREMENTS ON THIN METAL-OXIDE LAYERS

被引：10

作者：

ALBERS, T ^{[1
]}

NEUMANN, M ^{[1
]}

LIPINSKY, D ^{[1
]}

BENNINGHOVEN, A ^{[1
]}

机构：

[1] UNIV MUNSTER,INST PHYS,W-4400 MUNSTER,GERMANY

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷 / 1 -4 pt A期

关键词：

D O I：

10.1016/0169-4332(93)90396-S

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Binary multilayers of TiO2/SiO2 and Si02/ZrO2 typically used as optical filters have been investigated by XPS, SIMS and SNMS. Depending on the composition of the layers, various SIMS signals are enhanced in the interface region of the depth profiles. Charging effects at the interfaces can be ruled out as an explanation for this behaviour by comparing SIMS with SNMS and XPS data. However, the chemical state of the elements, which was monitored by XPS as a function of depth, plays the key role in the observed variations.

引用

页码：49 / 52

页数：4

共 5 条

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