SUPER LARGE GRAIN POLYCRYSTALLINE SILICON OBTAINED FROM PYROLYSIS OF SI2H6 AND ANNEALING

被引：16

作者：

SCHEID, E ^{[1
]}

DEMAUDUIT, B ^{[1
]}

TAURINES, P ^{[1
]}

BIELLEDASPET, D ^{[1
]}

机构：

[1] UNIV TOULOUSE 3, LMSM, F-31062 TOULOUSE, FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期

关键词：

Disilane; LPCVD; Polysilicon; Recrystallization;

D O I：

10.1143/JJAP.29.L2105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline silicon films on SiO2are formed by Low Pressure Chemical Vapor Deposition from disilane at 450°C and infsequent annealing at 600°C. Homogeneity performances of the deposition are given, which compares with those of Si deposition from SiH4. The structure of the polysilicon material obtained after annealing is shown. The resulting grain size is much larger than the one that could be obtained by Si deposition from SiH4and annealing. An optical evaluation of the film is given, confirming the potential of Si2H6for the fabrication of high field effect mobility thin film transistors. © 1990 IOP Publishing Ltd.

引用

页码：L2105 / L2107

页数：3

共 10 条

[1]

AOYAMA T, 1989, J ELECTROCHEM SOC, V136, P667

[2] HYDROGENATED AMORPHOUS-SILICON PRODUCED BY PYROLYSIS OF DISILANE IN A HOT WALL REACTOR [J].