ELECTRONIC-STRUCTURE OF THE GE-GAAS AND GE-ZNSE (100) INTERFACES

被引：76

作者：

POLLMANN, J ^{[1
]}

PANTELIDES, ST ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.21.709

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：709 / 722

页数：14

共 33 条

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