VAPOR GROWTH OF IN1-XGAXP FOR P-N-JUNCTION ELECTROLUMINESCENCE .2. LUMINESCENCE CHARACTERISTICS

被引：38

作者：

NUESE, CJ ^{[1
]}

SIGAI, AG ^{[1
]}

ABRAHAMS, MS ^{[1
]}

GANNON, JJ ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 07期

关键词：

D O I：

10.1149/1.2403607

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：956 / 965

页数：10

共 34 条

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NUESE, CJ ;

SIGAI, AG ;

GANNON, JJ .

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[23] OPTIMIZATION OF ELECTROLUMINESCENT EFFICIENCIES FOR VAPOR-GROWN GAAS 1-XPX DIODES [J].

NUESE, CJ ;

TIETJEN, JJ ;

GANNON, JJ ;

GOSSENBERGER, HF .

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[24]

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[25] PREPARATION AND PROPERTIES OF VAPOR-GROWN IN 1-XGAXP [J].

NUESE, CJ ;

RICHMAN, D ;

CLOUGH, RB .

METALLURGICAL TRANSACTIONS, 1971, 2 (03) :789-&

[26]

NUESE CJ, 1972, IEEE T ELECTRON DEVI, VED19, P1067

[27]

NUESE CJ, 1970, F1962868C0190 AIR FO

[28]

ONTON A, 1970, 3 P INT S GALL ARS R, P222

[29]

RODOT H, 1968, COMPT REND PARIS B, V267, P381

[30] OPTICALLY PUMPED IN1-X GAXP PLATELET LASERS FROM INFRARED TO YELLOW (8900-5800 A, 77 DEGREES K) [J].

SCIFRES, DR ;

HOLONYAK, N ;

DUPUIS, RD ;

MACKSEY, HM .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1019-&

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