ABNORMAL OUTDIFFUSION BEHAVIOR OF THE DEEP LEVEL EL2 AT THE SURFACE-LAYER OF UNDOPED SEMIINSULATING GAAS

被引：4

作者：

MATSUI, M

KAZUNO, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.98325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：658 / 660

页数：3

共 16 条

[1]

Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[2]

CASEY HC, 1975, POINT DEFECTS SOLIDS, V2, P163

[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY OF A THERMAL-CONVERSION LAYER ON SEMIINSULATING GAAS GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI METHOD [J].

CHAN, YJ ;

LIN, MS .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :2184-2186

[4] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J].

EVANS, CA ;

DELINE, VR ;

SIGMON, TW ;

LIDOW, A .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293

[5]

HONIG RE, 1969, RCA REV, V30, P285

[6]

HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[7]

KADOTA Y, 1986, SEMIINSULATING 3 5 M, P201

[8] THERMAL-CONVERSION OF GAAS [J].

KLEIN, PB ;

NORDQUIST, PER ;

SIEBENMANN, PG .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4861-4869

[9] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

LAGOWSKI, J ;

GATOS, HC ;

PARSEY, JM ;

WADA, K ;

KAMINSKA, M ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[10] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT [J].

MAKRAMEBEID, S ;

GAUTARD, D ;

DEVILLARD, P ;

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :161-163

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