DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY OF A THERMAL-CONVERSION LAYER ON SEMIINSULATING GAAS GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI METHOD

被引：5

作者：

CHAN, YJ ^{[1
]}

LIN, MS ^{[1
]}

机构：

[1] IND TECHNOL RES INST,MAT RES LABS,HSINCHU,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.337174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2184 / 2186

页数：3

共 12 条

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[10] DEEP LEVELS IN SI-IMPLANTED AND THERMALLY ANNEALED SEMI-INSULATING GAAS-CR [J].

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