MOVPE GROWTH OF SHORT-PERIOD SUPERLATTICES OF ALP-GAP AND ITS APPLICATION FOR LIGHT-EMITTING-DIODES

被引：29

作者：

MORII, A

OKAGAWA, H

HARA, K

YOSHINO, J

KUKIMOTO, K

机构：

[1] Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90550-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Short-period superlattices of AlP-GaP with different periods have been grown by metalorganic vapor phase epitaxy using triethylaluminum, triethylgallium and phosphine as the sources, and they have been characterized by X-ray diffraction and photoluminescence measurements. As a result, it has been found that the samples of the present study are better in heterointerface abruptness than those of the previous study, where trimethylaluminum and trimethylgallium were used as Al and Ga sources. Light-emitting diodes consisting of the AlP-GaP superlattices have been fabricated as an application of this superlattice system.

引用

页码：772 / 776

页数：5

共 5 条

[1] GAS SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SHORT-PERIOD GAP/ALP(001) SUPERLATTICES [J].

ASAHI, H ;

ASAMI, K ;

WATANABE, T ;

YU, SJ ;

KANEKO, T ;

EMURA, S ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1991, 58 (13) :1407-1409

[2] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J].

GNUTZMAN.U ;

CLAUSECK.K .

APPLIED PHYSICS, 1974, 3 (01) :9-14

[3] OPTICAL-PROPERTIES AND INDIRECT-TO-DIRECT TRANSITION OF GAP ALP(001) SUPERLATTICES [J].

KUMAGAI, M ;

TAKAGAHARA, T ;

HANAMURA, E .

PHYSICAL REVIEW B, 1988, 37 (02) :898-915

[4] SHORT-PERIOD SUPERLATTICES OF (GAP)N(ALP)N GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

MORII, A ;

OHNO, I ;

KANDA, A ;

ARAI, K ;

TOKUDOME, K ;

HARA, K ;

YOSHINO, J ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7B) :L1244-L1246

[5]

SCHMID U, 1990, PHYS REV B, V41, P5419

← 1 →