PHOTOLUMINESCENCE FROM THE QUASI-2-DIMENSIONAL ELECTRON-GAS AT A SINGLE SILICON DELTA-DOPED LAYER IN GAAS

被引：42

作者：

WAGNER, J ^{[1
]}

FISCHER, A ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART,GERMANY

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.42.7280

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Radiative recombination of quasi-two-dimensional electrons with photocreated holes is reported in single silicon -doped layers in GaAs. These holes are confined within the GaAs surface and the potential induced by the doping spike, which is repulsive for holes. Replacing the GaAs surface by an Al0.33Ga0.67As/GaAs heterointerface the photoluminescence from the -doping spike is drastically enhanced. It is shown by photoluminescence and Raman spectroscopy that the density of carriers created by cw photoexcitation can be made sufficiently high in the heterostructure to modify the actual shape of the doping-induced potential well. © 1990 The American Physical Society.

引用

页码：7280 / 7283

页数：4

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