THE TRANSPORT-EQUATION APPROACH FOR THE SIMULATION OF CHARGE STATE FLUCTUATION EFFECTS DURING ION PENETRATION INTO SOLIDS

被引：13

作者：

BURENKOV, AF

KOMAROV, FF

FEDOTOV, SA

机构：

[1] Institute of Applied Physics Problems, Minsk, 220064

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 67卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95765-J

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A model for high-energy ion implantation taking account of ion charge state fluctuations is proposed and the corresponding forward and backward kinetic equations are formulated. The results of simulation by numerical solution of the transport equations are given. It is shown that talking account of high-energy fluctuations results in an increase in straggling of the implanted impurity and radiation defect distributions and gives better agreement with experiments than the standard simulations.

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页码：30 / 34

页数：5

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