AMORPHOUS CLUSTERS ASSOCIATED WITH RECOIL OXYGEN CREATED IN AS+ ION-IMPLANTED SI-SIO2 SYSTEMS

被引：9

作者：

IZUMI, T ^{[1
]}

MATSUMORI, T ^{[1
]}

HIRAO, T ^{[1
]}

YAEGASHI, Y ^{[1
]}

HUSE, G ^{[1
]}

INOUE, K ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD, CTR RES LABS, OSAKA, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

D O I：

10.1016/0029-554X(81)90719-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：483 / 488

页数：6

共 9 条

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[7] ESR CENTERS IN SILICON MONOXIDE [J].

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[8] RESIDUAL DEFECTS IN SI PRODUCED BY RECOIL IMPLANTATION OF OXYGEN [J].

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[9] STUDY OF SILICON-SILICON DIOXIDE STRUCTURE BY ELECTRON SPIN RESONANCE .1. [J].

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