ULTRAFAST, ALL-SILICON LIGHT-MODULATOR

被引：9

作者：

WANG, CC ^{[1
]}

CURRIE, M ^{[1
]}

ALEXANDROU, S ^{[1
]}

HSIANG, TY ^{[1
]}

机构：

[1] UNIV ROCHESTER,DEPT ELECT ENGN,ROCHESTER,NY 14623

来源：

OPTICS LETTERS | 1994年 / 19卷 / 18期

关键词：

D O I：

10.1364/OL.19.001453

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An ultrafast, all-silicon light-intensity modulator is proposed. The carrier-refraction effect is used to modulate the refractive index of silicon. An electric-field-induced Bragg reflector on a silicon-on-insulator optical waveguide efficiently converts the small modulation of the index of refraction into Light-intensity modulation. A modulator with 300-mu m interaction length is expected to have a modulation depth of similar to 40% with 5-V bias. Being based on free-carrier depletion, this modulator is expected to have a bandwidth limited only by the RC time constant, which is calculated for a sample device to be similar to 40 GHz.

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页码：1453 / 1455

页数：3

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