DEPTH RESOLUTION IN SPUTTER PROFILING - EVIDENCE AGAINST SEQUENTIAL LAYER SPUTTERING MODEL

被引：24

作者：

WITTMAACK, K

SCHULZ, F

机构：

来源：

THIN SOLID FILMS | 1978年 / 52卷 / 02期

关键词：

D O I：

10.1016/0040-6090(78)90144-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：259 / 270

页数：12

共 21 条

[11] INVESTIGATION OF SURFACE-REACTIONS BY STATIC METHOD OF SECONDARY ION MASS-SPECTROMETRY .3. OXIDATION OF VANADIUM, NIOBIUM AND TANTALUM IN MONOLAYER RANGE [J].

MULLER, A ;

BENNINGHOVEN, A .

SURFACE SCIENCE, 1973, 39 (02) :427-436

[12]

NAVINSEK B, 1972, PHYSICS IONIZED GASE, V6, P221

[13]

Schulz F., 1973, Radiation Effects, V18, P211, DOI 10.1080/00337577308232124

[14] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J].

SIGMUND, P .

PHYSICAL REVIEW, 1969, 184 (02) :383-+

[15] CONTRIBUTION TO INVESTIGATION OF ION IMPACT DESORPTION BY ION SCATTERING [J].

TAGLAUER, E ;

MARIN, G ;

HEILAND, W .

APPLIED PHYSICS, 1977, 13 (01) :47-49

[16] STUDY OF SPUTTERING OF ADSORBATES BY LOW-ENERGY IONS (O ON NI) [J].

TAGLAUER, E ;

MARIN, G ;

HEILAND, W ;

BEITAT, U .

SURFACE SCIENCE, 1977, 63 (01) :507-513

[17] SORBAS - APPARATUS FOR INVESTIGATING ION SCATTERING FROM SURFACES AT ENERGIES 100-2000 EV [J].

TAGLAUER, E ;

MELCHIOR, W ;

SCHUSTER, F ;

HEILAND, W .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (09) :768-772

[18] AUGER-ELECTRON SPECTROSCOPY STUDIES OF SPUTTER DEPOSITION AND SPUTTER REMOVAL OF MO FROM VARIOUS METAL-SURFACES [J].

TARNG, ML ;

WEHNER, GK .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2268-&

[19] GROWTH AND PROPERTIES OF GARNET-FILMS FOR STORAGE APPLICATION [J].

TOLKSDORF, W .

IEEE TRANSACTIONS ON MAGNETICS, 1975, 11 (05) :1074-1078

[20] RASTER SCANNING DEPTH PROFILING OF LAYER STRUCTURES [J].

WITTMAACK, K .

APPLIED PHYSICS, 1977, 12 (02) :149-156

← 1 2 3 →