MICROPLASMAS IN SILICON P-N JUNCTIONS AS DETECTORS FOR GAMMA RADIATION

被引:12
作者
RUGE, I
KEIL, G
机构
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D O I
10.1063/1.1718373
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:390 / &
相关论文
共 7 条
[1]  
CHYNOWETH AG, 1959, J APPL PHYS, V30, P1811
[2]  
HAITZ R, PRIVATE COMMUNICATI
[3]   THEORY OF MICROPLASMA INSTABILITY IN SILICON [J].
MCINTYRE, RJ .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :983-&
[4]   MICROPLASMAS IN SILICON [J].
ROSE, DJ .
PHYSICAL REVIEW, 1957, 105 (02) :413-418
[5]  
RUGE I, 1961, Z NATURFORSCH, VA 16, P1398
[6]  
SALZBERG B, 1958, P IRE, V46, P1536
[7]   GAMMA-IRRADIATION OF SILICON .1. LEVELS IN N-TYPE MATERIAL CONTAINING OXYGEN [J].
SONDER, E ;
TEMPLETON, LC .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1279-1286