ATOMIC-HYDROGEN CHEMISORPTION ON THE SI(111)7X7 SURFACE

被引:58
作者
SAKURAI, T
HASEGAWA, Y
HASHIZUME, T
KAMIYA, I
IDE, T
SUMITA, I
PICKERING, HW
HYODO, S
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期
关键词
D O I
10.1116/1.577080
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:259 / 261
页数:3
相关论文
共 13 条
[1]   SELF-CONSISTENT QUANTUM-THEORY OF CHEMISORPTION - H ON SI(111) [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1975, 34 (13) :806-809
[2]   ATOM-RESOLVED SURFACE-CHEMISTRY STUDIED BY SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY [J].
AVOURIS, P ;
WOLKOW, R .
PHYSICAL REVIEW B, 1989, 39 (08) :5091-5100
[3]   SURFACE STUDIES BY SPECTRAL ANALYSIS OF INTERNALLY REFLECTED INFRARED RADIATION - HYDROGEN ON SILICON [J].
BECKER, GE ;
GOBELI, GW .
JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (12) :2942-&
[4]   SURFACE INFRARED STUDY OF SI(100)-(2X1)H [J].
CHABAL, YJ ;
RAGHAVACHARI, K .
PHYSICAL REVIEW LETTERS, 1984, 53 (03) :282-285
[5]   HYDROGEN ADSORPTION AND SURFACE-STRUCTURES OF SILICON [J].
IBACH, H ;
ROWE, JE .
SURFACE SCIENCE, 1974, 43 (02) :481-492
[6]   REACTIONS OF ATOMIC-HYDROGEN WITH THE SI(111) (7X7) SURFACE BY HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY [J].
KOBAYASHI, H ;
EDAMOTO, K ;
ONCHI, M ;
NISHIJIMA, M .
JOURNAL OF CHEMICAL PHYSICS, 1983, 78 (12) :7429-7436
[7]  
MORTENSEN K, 1989, B AM PHYS SOC, V34, P820
[8]   REALISTIC TIGHT-BINDING MODEL FOR CHEMISORPTION - H ON SI AND GE (III) [J].
PANDEY, KC .
PHYSICAL REVIEW B, 1976, 14 (04) :1557-1570
[9]   SI(111)-SIH3 - SIMPLE NEW SURFACE PHASE [J].
PANDEY, KC ;
SAKURAI, T ;
HAGSTRUM, HD .
PHYSICAL REVIEW LETTERS, 1975, 35 (25) :1728-1731
[10]   CHEMISORPTION OF ATOMIC-HYDROGEN ON SILICON (111)7X7 SURFACE [J].
SAKURAI, T ;
HAGSTRUM, HD .
PHYSICAL REVIEW B, 1975, 12 (12) :5349-5354