SITE CHANGES OF ION-IMPLANTED LI IN GAAS BELOW 300-K

被引：16

作者：

LINDNER, G

WINTER, S

HOFSASS, H

JAHN, S

BLASSER, S

RECKNAGEL, E

WEYER, G

机构：

[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND

[2] CERN,DIV EP,CH-1211 GENEVA 23,SWITZERLAND

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.63.179

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：179 / 182

页数：4

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