PHOTOEMISSION-STUDY ON INITIAL-STAGE OF GAAS GROWTH ON SI

被引：11

作者：

OKUMURA, H

SUZUKI, Y

MIKI, K

SAKAMOTO, K

SAKAMOTO, T

MISAWA, S

YOSHIDA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.584771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：481 / 486

页数：6

共 16 条

[1] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9
[2] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON
BIEGELSEN, DK
PONCE, FA
SMITH, AJ
TRAMONTANA, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1856 - 1859
[3] INTERFACE FORMATION OF GAAS WITH SI(100), SI(111), AND GE(111) - CORE-LEVEL SPECTROSCOPY FOR MONOLAYER COVERAGES OF GAAS, GA, AND AS
BRINGANS, RD
OLMSTEAD, MA
UHRBERG, RIG
BACHRACH, RZ
[J]. PHYSICAL REVIEW B, 1987, 36 (18): : 9569 - 9580
[4] FORMATION OF THE INTERFACE BETWEEN GAAS AND SI - IMPLICATIONS FOR GAAS-ON-SI HETEROEPITAXY
BRINGANS, RD
OLMSTEAD, MA
UHRBERG, RIG
BACHRACH, RZ
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 523 - 525
[5] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
FISCHER, R
MORKOC, H
NEUMANN, DA
ZABEL, H
CHOI, C
OTSUKA, N
LONGERBONE, M
ERICKSON, LP
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1640 - 1647
[6] POLAR HETEROJUNCTION INTERFACES
HARRISON, WA
KRAUT, EA
WALDROP, JR
GRANT, RW
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410
[7] PHOTOEMISSION-STUDIES OF INTRINSIC SURFACE-STATES ON SI(100)
HIMPSEL, FJ
EASTMAN, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1297 - 1299
[8] HULL R, 1987, P MATER RES SOC, V94, P25
[9] INITIAL-STAGE AND DOMAIN-STRUCTURE OF GAAS GROWN ON SI(100) BY MOLECULAR-BEAM EPITAXY
KAWABE, M
UEDA, T
TAKASUGI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02): : L114 - L116
[10] GROWTH OF SINGLE DOMAIN GAAS ON 2-INCH SI(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY
NISHI, S
INOMATA, H
AKIYAMA, M
KAMINISHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (06): : L391 - L393

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