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COMPUTER-SIMULATIONS OF SCHOTTKY CONTACTS WITH A NON-CONSTANT RECOMBINATION VELOCITY
被引:16
作者
:
NYLANDER, JO
论文数:
0
引用数:
0
h-index:
0
NYLANDER, JO
MASSZI, F
论文数:
0
引用数:
0
h-index:
0
MASSZI, F
SELBERHERR, S
论文数:
0
引用数:
0
h-index:
0
SELBERHERR, S
BERG, S
论文数:
0
引用数:
0
h-index:
0
BERG, S
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1989年
/ 32卷
/ 05期
关键词
:
D O I
:
10.1016/0038-1101(89)90125-1
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:363 / 367
页数:5
相关论文
共 18 条
[1]
A REVISED BOUNDARY-CONDITION FOR THE NUMERICAL-ANALYSIS OF SCHOTTKY-BARRIER DIODES
[J].
ADAMS, J
论文数:
0
引用数:
0
h-index:
0
ADAMS, J
;
TANG, TW
论文数:
0
引用数:
0
h-index:
0
TANG, TW
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(09)
:525
-527
[2]
MONTE-CARLO SIMULATION OF CURRENT TRANSPORT IN FORWARD-BIASED SCHOTTKY-BARRIER DIODES
[J].
论文数:
引用数:
h-index:
机构:
BACCARANI, G
;
MAZZONE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BOLOGNA,IST ELETTR,BOLOGNA,ITALY
MAZZONE, AM
.
ELECTRONICS LETTERS,
1976,
12
(02)
:59
-60
[3]
THE BETHE CONDITION FOR THERMIONIC EMISSION NEAR AN ABSORBING BOUNDARY
[J].
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Lab, Redhill, Engl, Philips Research Lab, Redhill, Engl
BERZ, F
.
SOLID-STATE ELECTRONICS,
1985,
28
(10)
:1007
-1013
[4]
ON THE CURRENT-VOLTAGE CHARACTERISTICS OF EPITAXIAL SCHOTTKY-BARRIER DIODES
[J].
CHUANG, CT
论文数:
0
引用数:
0
h-index:
0
CHUANG, CT
.
SOLID-STATE ELECTRONICS,
1984,
27
(04)
:299
-304
[5]
CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
[J].
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
SOLID-STATE ELECTRONICS,
1966,
9
(11-1)
:1035
-&
[6]
CALCULATION OF CHARGE-DISTRIBUTIONS AND MINORITY-CARRIER INJECTION RATIO FOR HIGH-BARRIER SCHOTTKY DIODES
[J].
ELFSTEN, B
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Uppsala, Electronic Dep,, Uppsala, Swed, Univ of Uppsala, Electronic Dep, Uppsala, Swed
ELFSTEN, B
;
TOVE, PA
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Uppsala, Electronic Dep,, Uppsala, Swed, Univ of Uppsala, Electronic Dep, Uppsala, Swed
TOVE, PA
.
SOLID-STATE ELECTRONICS,
1985,
28
(07)
:721
-727
[7]
BAMBI - A DESIGN-MODEL FOR POWER MOSFETS
[J].
FRANZ, AF
论文数:
0
引用数:
0
h-index:
0
机构:
VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTRON,A-1040 VIENNA,AUSTRIA
VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTRON,A-1040 VIENNA,AUSTRIA
FRANZ, AF
;
FRANZ, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTRON,A-1040 VIENNA,AUSTRIA
VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTRON,A-1040 VIENNA,AUSTRIA
FRANZ, GA
.
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS,
1985,
4
(03)
:177
-189
[8]
MINORITY-CARRIER EFFECTS UPON SMALL-SIGNAL AND STEADY-STATE PROPERTIES OF SCHOTTKY DIODES
[J].
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, DEPT ELECT ENGN, HAMILTON, ONTARIO, CANADA
GREEN, MA
;
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, DEPT ELECT ENGN, HAMILTON, ONTARIO, CANADA
SHEWCHUN, J
.
SOLID-STATE ELECTRONICS,
1973,
16
(10)
:1141
-1150
[9]
A SIMPLE-MODEL FOR COMPUTER-SIMULATION OF SCHOTTKY-BARRIER DIODES
[J].
GUO, SF
论文数:
0
引用数:
0
h-index:
0
GUO, SF
.
SOLID-STATE ELECTRONICS,
1984,
27
(06)
:537
-543
[10]
Masszi F., 1986, 12th Nordic Semiconductor Meeting. Proceedings, P100
←
1
2
→
共 18 条
[1]
A REVISED BOUNDARY-CONDITION FOR THE NUMERICAL-ANALYSIS OF SCHOTTKY-BARRIER DIODES
[J].
ADAMS, J
论文数:
0
引用数:
0
h-index:
0
ADAMS, J
;
TANG, TW
论文数:
0
引用数:
0
h-index:
0
TANG, TW
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(09)
:525
-527
[2]
MONTE-CARLO SIMULATION OF CURRENT TRANSPORT IN FORWARD-BIASED SCHOTTKY-BARRIER DIODES
[J].
论文数:
引用数:
h-index:
机构:
BACCARANI, G
;
MAZZONE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BOLOGNA,IST ELETTR,BOLOGNA,ITALY
MAZZONE, AM
.
ELECTRONICS LETTERS,
1976,
12
(02)
:59
-60
[3]
THE BETHE CONDITION FOR THERMIONIC EMISSION NEAR AN ABSORBING BOUNDARY
[J].
BERZ, F
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Lab, Redhill, Engl, Philips Research Lab, Redhill, Engl
BERZ, F
.
SOLID-STATE ELECTRONICS,
1985,
28
(10)
:1007
-1013
[4]
ON THE CURRENT-VOLTAGE CHARACTERISTICS OF EPITAXIAL SCHOTTKY-BARRIER DIODES
[J].
CHUANG, CT
论文数:
0
引用数:
0
h-index:
0
CHUANG, CT
.
SOLID-STATE ELECTRONICS,
1984,
27
(04)
:299
-304
[5]
CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
[J].
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
SOLID-STATE ELECTRONICS,
1966,
9
(11-1)
:1035
-&
[6]
CALCULATION OF CHARGE-DISTRIBUTIONS AND MINORITY-CARRIER INJECTION RATIO FOR HIGH-BARRIER SCHOTTKY DIODES
[J].
ELFSTEN, B
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Uppsala, Electronic Dep,, Uppsala, Swed, Univ of Uppsala, Electronic Dep, Uppsala, Swed
ELFSTEN, B
;
TOVE, PA
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Uppsala, Electronic Dep,, Uppsala, Swed, Univ of Uppsala, Electronic Dep, Uppsala, Swed
TOVE, PA
.
SOLID-STATE ELECTRONICS,
1985,
28
(07)
:721
-727
[7]
BAMBI - A DESIGN-MODEL FOR POWER MOSFETS
[J].
FRANZ, AF
论文数:
0
引用数:
0
h-index:
0
机构:
VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTRON,A-1040 VIENNA,AUSTRIA
VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTRON,A-1040 VIENNA,AUSTRIA
FRANZ, AF
;
FRANZ, GA
论文数:
0
引用数:
0
h-index:
0
机构:
VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTRON,A-1040 VIENNA,AUSTRIA
VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTRON,A-1040 VIENNA,AUSTRIA
FRANZ, GA
.
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS,
1985,
4
(03)
:177
-189
[8]
MINORITY-CARRIER EFFECTS UPON SMALL-SIGNAL AND STEADY-STATE PROPERTIES OF SCHOTTKY DIODES
[J].
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, DEPT ELECT ENGN, HAMILTON, ONTARIO, CANADA
GREEN, MA
;
SHEWCHUN, J
论文数:
0
引用数:
0
h-index:
0
机构:
MCMASTER UNIV, DEPT ELECT ENGN, HAMILTON, ONTARIO, CANADA
SHEWCHUN, J
.
SOLID-STATE ELECTRONICS,
1973,
16
(10)
:1141
-1150
[9]
A SIMPLE-MODEL FOR COMPUTER-SIMULATION OF SCHOTTKY-BARRIER DIODES
[J].
GUO, SF
论文数:
0
引用数:
0
h-index:
0
GUO, SF
.
SOLID-STATE ELECTRONICS,
1984,
27
(06)
:537
-543
[10]
Masszi F., 1986, 12th Nordic Semiconductor Meeting. Proceedings, P100
←
1
2
→